Analysis on Resistive Random Access Memory (RRAM) 1S1R Array
نویسندگان
چکیده
Lorem ipsum dolor sit amet, consectetur adipiscing elit. Increasing dependence of the functionality and performance of computing system on the characteristics of the memory subsystem calls for further study on various memory technologies. Conventional memory technologies, such as SRAM, DRAM and FLASH, suffer from the formidable device scaling challenges, which makes researchers pay more attention to the emerging memories. Resistive Ramdom Access Memory (RRAM) is considered as one of the promising emerging memory candidates due to its simple structure, low switching voltage (< 3V), fast switching speed (< 10ns), excellent scalability (< 10nm) and good compatibility with the current CMOS technology.
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